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UNR8231|UN8231 Datasheet

  • UNR8231|UN8231

  • Composite Device - Transistors with built-in Resistor

  • 81.68KB

  • 3頁

  • ETC

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Transistors with built-in Resistor
UNR8231/8231A
(UN8231/8231A)
Silicon NPN epitaxial planar type
Unit: mm
For switching
鈻?/div>
Features
鈥?/div>
High forward current transfer ratio h
FE
鈥?/div>
Resistor built-in type, allowing downsizing of the equipment
and reduction of the number of parts
鈥?/div>
Available in a type with radial taping
0.7
6.9
鹵0.1
4.0
(1.0)
(0.2)
4.5
鹵0.1
2.5
鹵0.1
(0.8)
(0.5)
0.65 max.
(1.0)
14.5
鹵0.5
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Collector-base voltage UNR8231
(Emitter open)
Collector-emitter
voltage (Base open)
Collector current
Peak collector current
Total power dissipation
*
Junction temperature
Storage temperature
UNR8231A
UNR8231
UNR8231A
I
C
I
CP
P
T
T
j
T
stg
V
CEO
Symbol
V
CBO
Rating
20
60
20
50
0.7
1.5
1
150
鈭?5
to
+150
A
A
W
擄C
擄C
R
1
(1 k鈩?
B
R
2
(4.7 k鈩?
C
Unit
V
0.45
+0.10
鈥?.05
2.5
鹵0.5
2.5
鹵0.5
1.05
鹵0.05
0.45
+0.10
鈥?.05
V
1
2
3
1: Emitter
2: Collector
3: Base
MT-2-A1 Package
Internal Connection
Note) *: Printed circuit board: Copper foil area of 1 cm
2
or more, and the
board thickness of 1.7 mm for the collector portion
E
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage UNR8231
(Emitter open)
Collector-emitter
voltage (Base open)
UNR8231A
UNR8231
UNR8231A
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
R
1
R
1
/R
2
f
T
V
CB
=
10 V, I
E
= 鈭?0
mA, f
=
200 MHz
V
CB
=
15 V, I
E
=
0
V
CE
=
15 V, I
B
=
0
V
EB
=
14 V, I
C
=
0
V
CE
=
10 V, I
C
=
150 mA
I
C
=
500 mA, I
B
=
5 mA
0.7
0.016
1.0
0.021
200
800
V
CEO
I
C
=
1 mA, I
B
=
0
Symbol
V
CBO
Conditions
I
C
=
10
碌A,
I
E
=
0
Min
20
60
20
50
1
10
0.5
2 100
0.4
1.3
0.025
碌A
碌A
mA
錚?/div>
V
k鈩?/div>
錚?/div>
MHz
V
Typ
Max
Unit
V
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
*
Input resistance
Resistance ratio
Transition frequency
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
Note) The part numbers in the parenthesis show conventional part number.
Publication date: January 2004
SJH00033BED
1

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